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Same model may have multiple batches, images only for reference.
SI3850ADV-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI3850ADV-T1-GE3

Part No SI3850ADV-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 20V 1.4A 6-TSOP
Datasheet
SI3850ADV-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type N and P-Channel, Common Drain
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 1.4A, 960mA
Maximum Rds On at Id,Vgs 300 mOhm @ 500mA, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 1.4nC @ 4.5V
Maximum Power Dissipation 1.08W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Win Source Part Number 1095866-SI3850ADV-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI3850ADV-T1-GE3 CAD Model

Description

The Vishay SI3850ADV-T1-GE3 is a common drain type N and P-channel FET with a logic level gate.

  • Category: Discrete Semiconductor Products
  • Status: Obsolete (EOL)
  • Temperature Range: -55°C to 150°C (TJ)
  • Case/Package: 6-TSOP
  • Maximum Power Dissipation: 1.08W
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 1.4A, 960mA
  • Gate-Source Threshold Voltage: 1.5V @ 250μA
  • Max Gate Charge: 1.4nC @ 4.5V
  • Maximum Rds On @ Id, Vgs: 300 mOhm @ 500mA, 4.5V
  • Supply and Demand Status: Balanced

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