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Same model may have multiple batches, images only for reference.
SI3993DV-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI3993DV-T1-GE3

Part No SI3993DV-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 30V 1.8A 6-TSOP
Datasheet
SI3993DV-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 1.8A
Maximum Rds On at Id,Vgs 133 mOhm @ 2.2A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 5nC @ 4.5V
Maximum Power Dissipation 830mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Win Source Part Number 1095879-SI3993DV-T1-GE3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI3993DV-T1-GE3 CAD Model

Description

The Vishay SI3993DV-T1-GE3 is an active electronic component with a 6-TSOP case/package.

  • Package: 6-TSOP
  • Mounting: SMD (SMT)
  • FET Type: Logic Level Gate
  • Power Dissipation: 830mW
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 1.8A @ 25°C
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 5nC @ 4.5V
  • Maximum Rds On at Id,Vgs: 133 mOhm @ 2.2A, 10V
  • Supply and Demand Status: sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
11+ $5.3788 $59.1668
27+ $4.4133 $119.1591
41+ $4.2758 $175.3078
56+ $4.1384 $231.7504
73+ $3.9998 $291.9854
97+ $3.5863 $347.8711
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Availability: 1,244 pieces
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