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Same model may have multiple batches, images only for reference.
SI4136DY-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI4136DY-T1-GE3

Part No SI4136DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 46A 8-SOIC
Datasheet
SI4136DY-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 46A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 110nC @ 10V
Max Input Capacitance 4560pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.5W (Ta), 7.8W (Tc)
Maximum Rds On at Id,Vgs 2 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 064473-SI4136DY-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI4136DY-T1-GE3 CAD Model

Description

The SI4136DY-T1-GE3 is an N-channel MOSFET that belongs to the discrete semiconductor products category.

  • Manufacturer: Vishay
  • Package: 8-SO
  • Power Dissipation: 3.5W (Ta) and 7.8W (Tc)
  • Temperature Range: -55°C to 150°C (TJ)
  • Maximum Rds On: 2 mOhm @ 15A, 10V
  • Gate-Source Threshold Voltage: 2.2V @ 250μA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 110nC @ 10V
  • Supply and Demand: Balance

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.0805 $59.4275
135+ $0.8866 $119.6910
205+ $0.8590 $176.0950
280+ $0.8313 $232.7640
360+ $0.8036 $289.2960
485+ $0.7204 $349.3940
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Availability: 1,525 pieces
MOQ: 55 pcs
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