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Same model may have multiple batches, images only for reference.
SI4176DY-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI4176DY-T1-E3

Part No SI4176DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 12A 8SO / Trans MOSFET N-CH 30V 12A 8-Pin SO T/R
Datasheet
SI4176DY-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Series TrenchFET
Packaging Reel package
Channel Type Type N
Technology MOSFET
Drain Source Voltage 30V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Maximum) @ Id 2.2V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 15nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 490pF @ 15V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 2.4W (Ta), 5W (Tc)
Rds On (Maximum) @ Id, Vgs 20 mOhm @ 8.3A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package 8-SO
Package 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 794243-SI4176DY-T1-E3
Popularity Medium
Supply and Demand Status Limited
Family Name SI4176DY
Introduction Date December 08, 2009
ECCN EAR99
Estimated EOL Date 2022
Ultra Librarian 3D Model Ultra Librarian SI4176DY-T1-E3 CAD Model

Description

The Vishay Siliconix SI4176DY-T1-E3 is a high performance MOSFET transistor designed to operate in a wide range of temperatures, from -55°C to 150°C.

  • Continuous Drain Current @ 25°C: Up to 12A
  • Series: TrenchFET
  • Package: 8-SOIC (0.154", 3.90mm Width)
  • Gate Charge (Qg): 15nC @ 10V
  • Input Capacitance (Ciss): 490pF @ 15V
  • Drain Source Voltage: 30V
  • Rds On (Maximum) @ Id, Vgs: 20 mOhm @ 8.3A, 10V
  • Channel Type: N
  • Drive Voltage: 4.5V, 10V

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