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Same model may have multiple batches, images only for reference.
FDI8441
Same model may have multiple batches, images only for reference.

FDI8441

Part No FDI8441
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 26A/80A I2PAK / N-Channel 40 V 26A (Ta), 80A (Tc) 300W (Tc) Through Hole I2PAK (TO-262)
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer Fairchild Semiconductor
Packaging Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 26A, 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 280 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 15 pF @ 25 V
Power Dissipation (Max) 300W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Through Hole
Supplier Device Package I2PAK (TO-262)
Case / Package TO-262-3 Long Leads, I²Pak, TO-262AA
RoHS Status ROHS3 Compliant
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number FAIFSCFDI8441,2156-FDI8441-FS
Standard Package 400
Win Source Part Number 1325373-FDI8441
Ultra Librarian 3D Model Ultra Librarian FDI8441 CAD Model

Description

The Fairchild Semiconductor FDI8441 is an N-Channel MOSFET with a drain to source voltage (Vdss) of 40V and a continuous drain current of 26A @ 25°C, 80A (Tc).

  • Rds On (Max) @ Id, Vgs: 2.7mOhm @ 80A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250μA
  • Power Dissipation (Max): 300W (Tc)
  • Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 25 V
  • Vgs (Max): ±20V
  • Package: TO-262-3 Long Leads, I²Pak, TO-262AA
  • Operating Temperature Range: -55°C ~ 175°C (TJ)
  • Status: Obsolete
  • Drive Voltage (Max Rds On, Min Rds On): 10V

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