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Same model may have multiple batches, images only for reference.
SI4210DY-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI4210DY-T1-GE3

Part No SI4210DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 6.5A 8-SOIC
Datasheet
SI4210DY-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 6.5A
Maximum Rds On at Id,Vgs 35.5 mOhm @ 5A, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 12nC @ 10V
Max Input Capacitance 445pF @ 15V
Maximum Power Dissipation 2.7W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 028462-SI4210DY-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI4210DY-T1-GE3 CAD Model

Description

The Vishay 028462-SI4210DY-T1-GE3 is a 2 N-Channel (Dual) FET type electronic component with a logic level gate feature.

  • Maximum Power Dissipation: 2.7W
  • Drain-Source Breakdown Voltage: 30V
  • Packaging: 8-SO

This component is suitable for use in various electronic devices.

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.8461 $59.2270
170+ $0.6943 $118.0310
260+ $0.6726 $174.8760
355+ $0.6509 $231.0695
460+ $0.6292 $289.4320
615+ $0.5641 $346.9215
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,800 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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