SI4408DY-T1-GE3 is a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) designed by Vishay Siliconix.

• Channel Type: N-channel FET
• Maximum Drain to Source Voltage: 20V
• Continuous Drain Current: 14A (Ta)
• Maximum On-Resistance: 4.5mOhm @ 21A and 10V
• Gate-Source Threshold Voltage: 1V @ 250μA (Min)
• Power Dissipation: 1.6W (Ta)
• Package/Case Type: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC
• Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 4.5 V
• Maximum Vgs: ±20V
• Operating Temperature Range: -55°C to 150°C (TJ)
• ECCN: EAR99
• HTSUS: 8541.29.0095
• Base Product Number: SI4408
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V