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Same model may have multiple batches, images only for reference.
SI4412ADY-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI4412ADY-T1-E3

Part No SI4412ADY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 5.8A 8-SOIC
Datasheet
SI4412ADY-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 5.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA (Min)
Max Gate Charge 20nC @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.3W (Ta)
Maximum Rds On at Id,Vgs 24 mOhm @ 8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 100946-SI4412ADY-T1-E3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI4412ADY-T1-E3 CAD Model

Description

The SI4412ADY-T1-E3 is an N-channel MOSFET from Vishay that comes in an 8-SO package.

  • Power Dissipation: 1.3W (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 5.8A (Ta)
  • Gate-Source Threshold Voltage: 1V @ 250μA (Min)
  • Max Gate Charge: 20nC @ 10V
  • Maximum Rds On @ Id, Vgs: 24 mOhm @ 8A, 10V
  • Temperature Range: from -55°C to 150°C (TJ)
  • Supply and Demand Status: sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
175+ $0.3361 $58.8175
420+ $0.2760 $115.9200
650+ $0.2680 $174.2000
895+ $0.2587 $231.5365
1,155+ $0.2506 $289.4430
1,550+ $0.2241 $347.3550
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 17,716 pieces
MOQ: 175 pcs
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