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Same model may have multiple batches, images only for reference.
SI4412ADY-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI4412ADY-T1-GE3

Part No SI4412ADY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 5.8A 8-SOIC
Datasheet
SI4412ADY-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 5.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA (Min)
Max Gate Charge 20nC @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.3W (Ta)
Maximum Rds On at Id,Vgs 24 mOhm @ 8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 127973-SI4412ADY-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI4412ADY-T1-GE3 CAD Model

Description

The Vishay 127973-SI4412ADY-T1-GE3 is an N-channel MOSFET used in various applications.

  • Popularity: medium
  • Supply and Demand Status: balanced
  • Status: obsolete (EOL)
  • Threat of Fake Products: 37 percent likelihood
  • Manufacturer: Vishay

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Pricing & Ordering

Quantity Unit Price Ext. Price
95+ $0.6343 $60.2585
225+ $0.5206 $117.1350
345+ $0.5043 $173.9835
475+ $0.4880 $231.8000
615+ $0.4717 $290.0955
820+ $0.4230 $346.8600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,023 pieces
MOQ: 95 pcs
Order Increment : 1 pcs
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