The SI4413CDY-T1-E3 is a P-Channel 30 V (D-S) MOSFET from Vishay. This power MOSFET utilizes TrenchFET® power MOSFET technology, offering excellent on-resistance and low gate charge. It is designed for a wide range of applications requiring efficient power management.

Applications

• Load Switching
• DC-DC Conversion
• Power Management in Portable Devices
• Battery Management Systems

Features

• TrenchFET® Power MOSFET Technology
• P-Channel
• Low On-Resistance: RDS(on) = 0.015 Ω at VGS = -10 V
• High Current Capability: ID = -16 A (continuous)
• 30 V Drain-Source Voltage (VDS)
• Logic Level Gate Drive
• 100% Rg Tested
• Halogen-free According to IEC 61249-2-21 Definition
• Available in a PowerPAK® SO-8 Package

Benefits

• High Efficiency: Low on-resistance minimizes power loss, leading to improved efficiency in power management applications.
• Compact Design: The PowerPAK® SO-8 package allows for a compact design, suitable for space-constrained applications.
• Ease of Use: Logic level gate drive simplifies the driving circuitry, making it easier to implement in various designs.
• Reliability: 100% Rg tested ensures the reliability and performance of the MOSFET.
• Environmentally Friendly: Halogen-free construction makes it environmentally friendly.

Additional Details

The SI4413CDY-T1-E3 is supplied in a PowerPAK® SO-8 surface-mount package. It is RoHS compliant and halogen-free. The device is designed for optimal thermal performance, allowing for efficient heat dissipation. The MOSFET's gate threshold voltage (VGS(th)) is typically -1.8 V. The device is suitable for applications operating at moderate frequencies. The operating temperature range is -55°C to +150°C.