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SI4434ADY-T1-GE3

Part No SI4434ADY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series ThunderFET®
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V
Current - Continuous Drain (Id) @ 25°C 2.8A (Ta), 4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Rds On (Max) @ Id, Vgs 150mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16.5 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 600 pF @ 125 V
Power Dissipation (Max) 2.9W (Ta), 6W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width)
Base Product Number SI4434
Other Names SI4434ADY-T1-GE3DKR,SI4434ADY-T1-GE3CT,SI4434ADY-GE3,SI4434ADY-T1-GE3TR
Standard Package 2,500
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277688-SI4434ADY-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SI4434ADY-T1-GE3 CAD Model

Description

The SI4434ADY-T1-GE3 MOSFET is a N-Channel FET.

  • Drain to Source Voltage: 250 V
  • Continuous Drain Current: 2.8A (Ta), 4.1A (Tc)
  • Rds On (Max) @ Id, Vgs: 150mOhm @ 2.8A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250μA
  • Mounting Type: SMD (SMT)
  • Package: 8-SOIC (0.154", 3.90mm Width)
  • Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 125 V
  • Application: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $58.2090 $58.2090
3+ $47.7612 $143.2836
4+ $46.2687 $185.0748
5+ $44.7762 $223.8810
6+ $43.2836 $259.7016
8+ $38.8060 $310.4480
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,600 pieces
Order Increment : 1 pcs
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