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SI4435DDY-T1-GE3

Part No SI4435DDY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 11.4A 8-SOIC
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 11.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 50nC @ 10V
Max Input Capacitance 1350pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 5W (Tc)
Maximum Rds On at Id,Vgs 24 mOhm @ 9.1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 028487-SI4435DDY-T1-GE3
Family Name SI4435DDY
Introduction Date August 08, 2008
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Application Field Used in Power Management, Consumer Electronics
Ultra Librarian 3D Model Ultra Librarian SI4435DDY-T1-GE3 CAD Model

Description

The Vishay 028487-SI4435DDY-T1-GE3 is a P-channel MOSFET transistor with a maximum power dissipation of 2.5W (Ta) and 5W (Tc).

  • Package: 8-SO
  • Operating Temperature: -55°C to 150°C
  • Continuous Drain Current: 11.4A (Tc)

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Pricing & Ordering

Quantity Unit Price Ext. Price
225+ $0.2264 $50.9400
475+ $0.2121 $100.7475
735+ $0.2049 $150.6015
1,050+ $0.1906 $200.1300
1,365+ $0.1835 $250.4775
1,705+ $0.1763 $300.5915
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 839,544 pieces
MOQ: 225 pcs
Order Increment : 1 pcs
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