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Same model may have multiple batches, images only for reference.
SI4442DY-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI4442DY-T1-GE3

Part No SI4442DY-T1-GE3
Manufacturer Vishay
Catalog FETs - Single
Description MOSFET N-CH 30V 15A 8-SOIC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Vishay Siliconix
Packaging Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) at 25°C 15A
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Rds On (Maximum) at Id, Vgs 4.5mOhm at 22A, 10V
Vgs(th) (Maximum) at Id 1.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 50nC at 4.5V
Maximum Vgs ±12V
Power Dissipation (Maximum) 1.6W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package 8-SO
Manufacturer Package 8-SOIC
Manufacturer Pack Quantity 2,500
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 806187-SI4442DY-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SI4442DY-T1-GE3 CAD Model

Description

The SI4442DY-T1-GE3 is an N-channel MOSFET from Vishay Siliconix.

  • Drain to Source Voltage (Vdss): 30V
  • Power Dissipation (Maximum): 1.6W
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Gate Charge (Qg) (maximum) @ Vgs: 50nC @ 4.5V
  • Rds On (maximum) @ Id, Vgs: 4.5mOhm @ 22A, 10V
  • Win Source Part Number: 806187-SI4442DY-T1-GE3
  • Popularity: medium
  • Supply and Demand Status: balanced

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