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SI4447ADY-T1-GE3

Part No SI4447ADY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 40V 7.2A 8SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 7.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 38nC @ 10V
Max Input Capacitance 970pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 4.2W (Tc)
Maximum Rds On at Id,Vgs 45 mOhm @ 5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1095946-SI4447ADY-T1-GE3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI4447ADY-T1-GE3 CAD Model

Description

The Vishay MOSFET is a high-performance P-channel electronic component used in various applications.

  • Drain-Source Breakdown Voltage: 40V
  • Maximum Power Dissipation: 2.5W (Ta), 4.2W (Tc)
  • Maximum Rds On @ Id, Vgs: 45 mOhm @ 5A, 10V
  • Maximum Gate Charge: 38nC @ 10V
  • Maximum Input Capacitance: 970pF @ 20V
  • Mounting: 8-SO package
  • Packaging: reel - TR

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Pricing & Ordering

Quantity Unit Price Ext. Price
155+ $0.3252 $50.4060
330+ $0.3047 $100.5510
510+ $0.2944 $150.1440
735+ $0.2738 $201.2430
950+ $0.2635 $250.3250
1,185+ $0.2532 $300.0420
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 107,500 pieces
MOQ: 155 pcs
Order Increment : 1 pcs
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