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Same model may have multiple batches, images only for reference.
SI4505DY-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI4505DY-T1-E3

Part No SI4505DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 30V/8V 8-SOIC
Datasheet
SI4505DY-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V, 8V
Continuous Drain Current at 25°C 6A, 3.8A
Maximum Rds On at Id,Vgs 18 mOhm @ 7.8A, 10V
Gate-Source Threshold Voltage 1.8V @ 250μA
Max Gate Charge 20nC @ 5V
Maximum Power Dissipation 1.2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 028507-SI4505DY-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI4505DY-T1-E3 CAD Model

Description

The Vishay SI4505DY-T1-E3 is a N and P-Channel Logic Level Gate FET type electronic component.

  • Maximum Power Dissipation: 1.2W
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Package: 8-SO
  • Mounting: SMD (SMT) technology
  • Drain-Source Breakdown Voltage: 30V and 8V
  • Continuous Drain Current @ 25°C: 6A and 3.8A
  • Gate-Source Threshold Voltage: 1.8V @ 250μA
  • Maximum Gate Charge: 20nC @ 5V
  • Maximum Rds On @ Id,Vgs: 18 mOhm @ 7.8A, 10V
  • Supply and Demand Status: Balanced

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