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Same model may have multiple batches, images only for reference.
SI4532ADY-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI4532ADY-T1-GE3

Part No SI4532ADY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 30V 3.7A 8-SOIC
Datasheet
SI4532ADY-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 3.7A, 3A
Maximum Rds On at Id,Vgs 53 mOhm @ 4.9A, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 16nC @ 10V
Maximum Power Dissipation 1.13W, 1.2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 211640-SI4532ADY-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI4532ADY-T1-GE3 CAD Model

Description

The Vishay SI4532ADY-T1-GE3 is a N and P-channel logic level gate FET designed for use in discrete semiconductor products.

  • Package: 8-SO
  • Maximum Power Dissipation: 1.13W and 1.2W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 3.7A and 3A
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Gate Charge: 16nC @ 10V
  • Maximum Rds On @ Id,Vgs: 53 mOhm @ 4.9A, 10V
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.5650 $62.6000
90+ $1.2844 $115.5960
140+ $1.2439 $174.1460
195+ $1.2035 $234.6825
250+ $1.1631 $290.7750
335+ $1.0430 $349.4050
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,885 pieces
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