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SI4561DY-T1-GE3

Part No SI4561DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 40V 6.8A 8-SOIC
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 6.8A, 7.2A
Maximum Rds On at Id,Vgs 35.5 mOhm @ 5A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 640pF @ 20V
Maximum Power Dissipation 3W, 3.3W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 117648-SI4561DY-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI4561DY-T1-GE3 CAD Model

Description

The Vishay SI4561DY-T1-GE3 is a N and P-Channel FET type electronic component that features a logic level gate.

  • Designed For: Discrete semiconductor products
  • Product Status: Obsolete (EOL)
  • Temperature Range: -55°C to 150°C (TJ)
  • Case/Package: 8-SO
  • Maximum Power Dissipation: 3W and 3.3W
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current @ 25°C: 6.8A and 7.2A
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 20nC @ 10V
  • Maximum Input Capacitance: 640pF @ 20V
  • Maximum Rds On @ Id,Vgs: 35.5 mOhm @ 5A, 10V
  • Supply and Demand Status: Balance

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Pricing & Ordering

Quantity Unit Price Ext. Price
95+ $0.6260 $59.4700
225+ $0.5140 $115.6500
350+ $0.4978 $174.2300
480+ $0.4816 $231.1680
625+ $0.4655 $290.9375
830+ $0.4181 $347.0230
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,503 pieces
MOQ: 95 pcs
Order Increment : 1 pcs
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