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SI4626DY-T1-E3

Part No SI4626DY-T1-E3
Manufacturer Vishay
Catalog FETs - Single
Sample
Rohs State rohs
ECAD Module
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Manufacturer Vishay
Category Discrete Semiconductor Products
Family FETs - Single
Win Source Part Number 189931-SI4626DY-T1-E3
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI4626DY-T1-E3 CAD Model

Description

The SI4626DY-T1-E3 is a P-Channel MOSFET from Vishay Siliconix. It's designed for load switching applications where efficiency and space are critical. Its low on-resistance minimizes conduction losses, making it a suitable choice for battery-powered devices and other power management circuits.

Applications:

  • Load Switching
  • Power Management in Portable Devices
  • DC-DC Conversion
  • Battery Management Systems
  • Solid State Relays

Features:

  • P-Channel MOSFET
  • Low On-Resistance (RDS(on))
  • TrenchFET® Power MOSFET Technology
  • Small Footprint (PowerPAK® SC-70 Package)
  • Low Threshold Voltage
  • 100% Rg Tested
  • Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
  • Halogen-free according to IEC 61249-2-21 definition

Benefits:

  • Increased Efficiency: Low RDS(on) reduces power dissipation and improves overall circuit efficiency.
  • Compact Design: The small PowerPAK® SC-70 package allows for dense board layouts and miniaturization of electronic devices.
  • Extended Battery Life: Lower power losses translate into longer operating times for battery-powered applications.
  • Simplified Drive Circuitry: Low threshold voltage enables direct logic-level drive, simplifying the gate drive circuitry.
  • Reliable Performance: The robust design and high-quality manufacturing ensure reliable operation in demanding environments.

Additional Details:

The SI4626DY-T1-E3 features a drain-source voltage (VDS) rating typically of -20V and a gate-source voltage (VGS) rating of ±12V. The continuous drain current (ID) varies depending on the ambient temperature and mounting conditions. The on-resistance (RDS(on)) is specified at different gate-source voltage levels, allowing designers to optimize performance based on their specific application requirements. The PowerPAK® SC-70 package provides excellent thermal performance, enabling efficient heat dissipation. This MOSFET is suitable for applications requiring high efficiency, low voltage operation and minimal footprint.

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