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SI4646DY-T1-E3

Part No SI4646DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 12A 8SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 45nC @ 10V
Max Input Capacitance 1790pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3W (Ta), 6.25W (Tc)
Maximum Rds On at Id,Vgs 11.5 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 211642-SI4646DY-T1-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI4646DY-T1-E3 CAD Model

Description

The Vishay SI4646DY-T1-E3 is an N-channel MOSFET that comes in an 8-SO package.

  • Designed for: Discrete semiconductor products
  • Drain-source breakdown voltage: 30V
  • Continuous drain current: 12A @ 25°C
  • Maximum Rds On: 11.5 mOhm @ 10A and 10V
  • Gate-source threshold voltage: 2.5V @ 1mA
  • Status: Obsolete
  • Operating temperature range: -55°C to 150°C

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Shipping Information

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