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Same model may have multiple batches, images only for reference.
SI4823DY-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI4823DY-T1-GE3

Part No SI4823DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 4.1A 8-SOIC
Datasheet
SI4823DY-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 12nC @ 10V
Max Input Capacitance 660pF @ 10V
Maximum Gate-Source Voltage ±12V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 1.7W (Ta), 2.8W (Tc)
Maximum Rds On at Id,Vgs 108 mOhm @ 3.3A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1096011-SI4823DY-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI4823DY-T1-GE3 CAD Model

Description

The Vishay SI4823DY-T1-GE3 is a P-channel MOSFET with a Schottky diode.

  • Power Dissipation: 1.7W (Ta), 2.8W (Tc)
  • Drain-Source Breakdown Voltage: 20V
  • Rds On: 108 mOhm @ 3.3A, 4.5V
  • Package: 8-SO
  • Package Width: 3.90mm (0.154")
  • Operating Temperature: -55°C to 150°C
  • Drive Voltage: 2.5V (max Rds On), 4.5V (min Rds On)
  • Market Status: Active
  • Supply and Demand: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.6817 $58.8595
85+ $1.3802 $117.3170
130+ $1.3363 $173.7190
180+ $1.2936 $232.8480
235+ $1.2509 $293.9615
310+ $1.1215 $347.6650
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Availability: 5,000 pieces
MOQ: 35 pcs
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