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Same model may have multiple batches, images only for reference.
SI4825DY-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI4825DY-T1-GE3

Part No SI4825DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 8.1A 8-SOIC
Datasheet
SI4825DY-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 8.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 71nC @ 10V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 1.5W (Ta)
Maximum Rds On at Id,Vgs 14 mOhm @ 11.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 129305-SI4825DY-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI4825DY-T1-GE3 CAD Model

Description

The Vishay electronic component is a high-quality MOSFET that is designed to meet the needs of various electronic devices.

  • Popularity: Medium
  • Supply and Demand Status: Limited
  • Manufacturer: Vishay
  • Win Source Part Number: 129305-SI4825DY-T1-GE3
  • Description: It is an essential component for various electronic devices that require high-quality MOSFETs.

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