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Same model may have multiple batches, images only for reference.
SI4900DY-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI4900DY-T1-E3

Part No SI4900DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 60V 5.3A 8-SOIC / Trans MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R
Datasheet
SI4900DY-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Series TrenchFET
Packaging Reel package
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain Source Voltage 60V
Current - Continuous Drain (Id) @ 25°C 5.3A
Rds On (Maximum) @ Id, Vgs 58 mOhm @ 4.3A, 10V
Vgs(th) (Maximum) @ Id 3V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 20nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 665pF @ 15V
Power - Max 3.1W
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Package 8-SOIC (0.154", 3.90mm Width)
Manufacturer Package 8-SO
Win Source Part Number 794278-SI4900DY-T1-E3
Popularity Medium
Supply and Demand Status Limited
Family Name Si4900DY
Introduction Date January 16, 2006
ECCN EAR99
Estimated EOL Date 2022
Ultra Librarian 3D Model Ultra Librarian SI4900DY-T1-E3 CAD Model

Description

The Vishay Siliconix SI4900DY-T1-E3 is a TrenchFET series dual N-channel logic level gate FET.

  • Continuous Drain Current: 5.3A
  • Power: 3.1W
  • Drain-Source Voltage: 60V
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Package: 8-SOIC (0.154", 3.90mm Width)
  • Mounting: Surface mount
  • Supply & Demand Status: Limited

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Quantity Unit Price Ext. Price
26+ $1.9838 $51.5788
62+ $1.6278 $100.9236
96+ $1.5769 $151.3824
132+ $1.5260 $201.4320
170+ $1.4752 $250.7840
227+ $1.3226 $300.2302
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