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Same model may have multiple batches, images only for reference.
SI4908DY-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI4908DY-T1-GE3

Part No SI4908DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
Product Status Obsolete
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 5A
Rds On (Max) @ Id, Vgs 60mOhm @ 4.1A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 355pF @ 20V
Power - Max 2.75W
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC
Base Product Number SI4908
Standard Package 2,500
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278472-SI4908DY-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SI4908DY-T1-GE3 CAD Model

Description

The Vishay SI4908DY-T1-GE3 MOSFET is a dual N-channel power MOSFET with a drain-source voltage of 40V and a continuous drain current of 5A.

  • Drain-Source Voltage: 40V
  • Continuous Drain Current: 5A
  • On-Resistance: 60mOhm @ 4.1A, 10V
  • Operating Temperature Range: -55°C to 150°C
  • Gate Charge: 12nC @ 10V
  • Input Capacitance: 355pF @ 20V

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