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AOI9N50

Part No AOI9N50
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 9A TO251A
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 24nC @ 10V
Max Input Capacitance 1160pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 178W (Tc)
Maximum Rds On at Id,Vgs 860 mOhm @ 4.5A, 10V
Temperature Range - Operating -50°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-251A
Dimension TO-251-3 Stub Leads, IPak
Win Source Part Number 039207-AOI9N50
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian AOI9N50 CAD Model

Description

AOI9N50 Transistor

The AOI9N50 is an N-channel Power MOSFET designed to handle high power levels while minimizing energy loss, making it ideal for a wide array of applications. Its robust construction ensures reliability and long-term operation in various circuit designs.

  • Applications:
    • Switch Mode Power Supplies (SMPS)
    • Uninterruptible Power Supplies (UPS)
    • DC-DC Converters
    • Motor Control Circuits
  • Features and Benefits:
    • High Efficiency: Designed to minimize energy loss for greater efficiency
    • Robust Design: Durable construction ensures long-term reliability
    • Low On-Resistance: Reduces power dissipation and increases overall system performance
    • High-Speed Switching: Allows for efficient operation in high-frequency applications
  • Additional Details: The AOI9N50 is optimized for applications requiring significant power handling with consistent performance, making it an excellent choice for industrial and automotive electronic systems.

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