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Same model may have multiple batches, images only for reference.
SI4992EY-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI4992EY-T1-E3

Part No SI4992EY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 75V 3.6A 8-SOIC
Datasheet
SI4992EY-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 3.6A
Maximum Rds On at Id,Vgs 48 mOhm @ 4.8A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 21nC @ 10V
Maximum Power Dissipation 1.4W
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 127897-SI4992EY-T1-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI4992EY-T1-E3 CAD Model

Description

The Vishay 127897-SI4992EY-T1-E3 is a dual N-channel logic level gate FET designed for surface mounting.

  • Status: Obsolete (EOL)
  • Temperature Range: -55°C to 175°C (TJ)
  • Maximum Power Dissipation: 1.4W
  • Drain-Source Breakdown Voltage: 75V
  • Continuous Drain Current @ 25°C: 3.6A
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Max Gate Charge: 21nC @ 10V
  • Maximum Rds On @ Id,Vgs: 48 mOhm @ 4.8A, 10V
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
175+ $0.3361 $58.8175
420+ $0.2760 $115.9200
650+ $0.2680 $174.2000
895+ $0.2587 $231.5365
1,155+ $0.2506 $289.4430
1,550+ $0.2241 $347.3550
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,000 pieces
MOQ: 175 pcs
Order Increment : 1 pcs
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