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Same model may have multiple batches, images only for reference.
SI5410DU-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI5410DU-T1-GE3

Part No SI5410DU-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SI5410DU-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 18mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1350 pF @ 20 V
Power Dissipation (Max) 3.1W (Ta), 31W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® ChipFET™ Single
Package / Case PowerPAK® ChipFET™ Single
Base Product Number SI5410
Other Names SI5410DUT1GE3,SI5410DU-T1-GE3TR,SI5410DU-T1-GE3CT,SI5410DU-T1-GE3DKR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277556-SI5410DU-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SI5410DU-T1-GE3 CAD Model

Description

The SI5410DU-T1-GE3 MOSFET is a powerful N-channel FET capable of handling continuous drain current up to 12A @ 25°C.

  • Drain to Source Voltage: 40V
  • Rds On: 18mOhm @ 6.6A and 10V
  • Gate Charge: 32nC @ 10V
  • Input Capacitance: 1350pF @ 20V
  • Maximum Operating Temperature: 150°C
  • Package: PowerPAK ChipFET Single package
  • Supplier: Vishay Siliconix
  • Product Status: obsolete

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $2.0785 $62.3550
70+ $1.7055 $119.3850
105+ $1.6521 $173.4705
145+ $1.5989 $231.8405
190+ $1.5455 $293.6450
255+ $1.3857 $353.3535
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Availability: 2,600 pieces
MOQ: 30 pcs
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