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Same model may have multiple batches, images only for reference.
SI5447DC-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI5447DC-T1-GE3

Part No SI5447DC-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 3.5A 1206-8
Datasheet
SI5447DC-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 450mV @ 250μA (Min)
Max Gate Charge 10nC @ 4.5V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 1.3W (Ta)
Maximum Rds On at Id,Vgs 76 mOhm @ 3.5A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 1206-8 ChipFET
Dimension 8-SMD, Flat Lead
Win Source Part Number 127600-SI5447DC-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI5447DC-T1-GE3 CAD Model

Description

The Vishay 127600-SI5447DC-T1-GE3 is a P-channel MOSFET with a drain-source breakdown voltage of 20V and a continuous drain current of 3.5A at 25°C.

  • Design: This chip is designed for use in discrete semiconductor products
  • Maximum Power Dissipation: 1.3W (Ta)
  • Package: 1206-8 ChipFET with 8-SMD, Flat Lead
  • Maximum Gate-Source Voltage: ±8V
  • Maximum Rds On at Id, Vgs: 76 mOhm @ 3.5A, 4.5V
  • Gate-Source Threshold Voltage: 450mV @ 250μA (Min)
  • Max Gate Charge: 10nC @ 4.5V
  • Supply and Demand Status: limited

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