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Same model may have multiple batches, images only for reference.
SI5461EDC-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI5461EDC-T1-GE3

Part No SI5461EDC-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 4.5A CHIPFET
Datasheet
SI5461EDC-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 450mV @ 250μA (Min)
Max Gate Charge 20nC @ 4.5V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 1.3W (Ta)
Maximum Rds On at Id,Vgs 45 mOhm @ 5A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 1206-8 ChipFET
Dimension 8-SMD, Flat Lead
Win Source Part Number 1096087-SI5461EDC-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI5461EDC-T1-GE3 CAD Model

Description

The Vishay 1096087-SI5461EDC-T1-GE3 is a P-Channel MOSFET that is ideal for a variety of applications.

  • Manufacturer: Vishay
  • Channel Type: P-Channel
  • Maximum Power Dissipation (Ta): 1.3W (Ta)
  • Continuous Drain Current @ 25°C: 4.5A (Ta)
  • Operating Temperature Range (TJ): -55°C to 150°C (TJ)
  • Supply and Demand: balanced

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