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SI5481DU-T1-E3

Part No SI5481DU-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 22mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 8 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 1610 pF @ 10 V
Power Dissipation (Max) 3.1W (Ta), 17.8W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® ChipFET™ Single
Package / Case PowerPAK® ChipFET™ Single
Base Product Number SI5481
Other Names SI5481DU-T1-E3DKR,SI5481DUT1E3,SI5481DU-T1-E3TR,SI5481DU-T1-E3CT
Standard Package 3,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277542-SI5481DU-T1-E3
Ultra Librarian 3D Model Ultra Librarian SI5481DU-T1-E3 CAD Model

Description

This Vishay Siliconix MOSFET transistor has a part number of 1277542-SI5481DU-T1-E3 and belongs to the discrete semiconductor products category.

  • Series: TrenchFET
  • Package: tape and reel with a standard package of 3,000
  • Channel Type: P-channel type
  • Drain to Source Voltage: 20 V
  • Continuous Drain Current: 12A @ 25°C
  • Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V
  • Power Dissipation (Max): 3.1W (Ta), 17.8W (Tc)
  • Package/Case: PowerPAK ChipFET Single
  • Supplier Device Package: PowerPAK ChipFET Single
  • Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 8 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 10 V
  • Vgs (Max): ±8V
  • Temperature Range - Operating: -55°C ~ 150°C (TJ)
  • ECCN: EAR99
  • HTSUS: 8541.29.0095
  • MSL Level: 1 (Unlimited)
  • REACH Status: REACH Unaffected

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