The SI5485DU-T1-GE3 is a P-channel MOSFET transistor from the TrenchFET series of discrete semiconductor products.

• Application: FETs and MOSFETs
• Package: Tape and Reel
• Standard Package: 3,000
• Drain to Source Voltage (Vdss): 20V
• Continuous Drain Current (Id): 12A (Tc) @ 25°C
• Rds On (Max) @ Id, Vgs: 25mOhm @ 5.9A, 4.5V
• Vgs(th) (Max) @ Id: 1.5V @ 250μA
• Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
• Package/Case: PowerPAK ChipFET Single
• Mounting Technology: SMD (SMT)
• Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 8 V
• Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V
• Vgs (Max): ±12V
• Temperature Range for Operating: -55°C ~ 150°C (TJ)
• REACH: Unaffected
• HTSUS Code: 8541.29.0095
• Manufacturer: Vishay Siliconix
• Base Product Number: SI5485
• Product Status: Obsolete