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Same model may have multiple batches, images only for reference.
SI5511DC-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI5511DC-T1-GE3

Part No SI5511DC-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SI5511DC-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel
Product Status Obsolete
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 4A, 3.6A
Rds On (Max) @ Id, Vgs 55mOhm @ 4.8A, 4.5V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.1nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 435pF @ 15V
Power - Max 3.1W, 2.6W
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case 8-SMD, Flat Lead
Supplier Device Package 1206-8 ChipFET™
Base Product Number SI5511
Other Names SI5511DC-T1-GE3CT,SI5511DCT1GE3,SI5511DC-T1-GE3TR,SI5511DC-T1-GE3DKR
Standard Package 3,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278481-SI5511DC-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SI5511DC-T1-GE3 CAD Model

Description

The Vishay TrenchFET series transistor is a discrete semiconductor product that is designed for use in a wide range of applications.

  • Maximum Drain to Source Voltage: 30V
  • Continuous Drain Current: Up to 4A
  • Maximum Power: Up to 3.1W
  • Operating Temperature Range: Up to 150°C (TJ)

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