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Same model may have multiple batches, images only for reference.
SI5513CDC-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI5513CDC-T1-E3

Part No SI5513CDC-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 20V 4A 1206-8
Datasheet
SI5513CDC-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 4A, 3.7A
Maximum Rds On at Id,Vgs 55 mOhm @ 4.3A, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 4.2nC @ 5V
Max Input Capacitance 285pF @ 10V
Maximum Power Dissipation 3.1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 1206-8 ChipFET
Win Source Part Number 322427-SI5513CDC-T1-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI5513CDC-T1-E3 CAD Model

Description

The Vishay SI5513CDC-T1-E3 is an N and P-channel logic level gate FET with a drain-source breakdown voltage of 20V and a maximum power dissipation of 3.1W.

  • Mounting: SMD (SMT) technology
  • Package: 1206-8 ChipFET case
  • Continuous Drain Current: 4A at 25°C
  • Gate-Source Threshold Voltage: 1.5V at 250μA
  • Maximum Rds on at Id,Vgs: 55 mOhm at 4.3A and 4.5V
  • Ideal For: use in discrete semiconductor products

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.6745 $50.5875
185+ $0.5534 $102.3790
280+ $0.5361 $150.1080
390+ $0.5188 $202.3320
500+ $0.5016 $250.8000
670+ $0.4497 $301.2990
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 33,000 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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