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Same model may have multiple batches, images only for reference.
SI5855CDC-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI5855CDC-T1-E3

Part No SI5855CDC-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 3.7A 1206-8
Datasheet
SI5855CDC-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 3.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 6.8nC @ 5V
Max Input Capacitance 276pF @ 10V
Maximum Gate-Source Voltage ±8V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 1.3W (Ta), 2.8W (Tc)
Maximum Rds On at Id,Vgs 144 mOhm @ 2.5A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 1206-8 ChipFET
Dimension 8-SMD, Flat Lead
Win Source Part Number 028582-SI5855CDC-T1-E3
Family Name Si5855CDC
Introduction Date September 28, 2008
ECCN EAR99
Estimated EOL Date Obsolete
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI5855CDC-T1-E3 CAD Model

Description

The 028582-SI5855CDC-T1-E3 is a P-channel MOSFET with a Schottky diode (isolated) feature manufactured by Vishay.

  • Product Type: Discrete semiconductor product
  • Package: 1206-8 ChipFET package
  • Maximum Power Dissipation: 1.3W (Ta), 2.8W (Tc)
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current at 25°C: 3.7A (Tc)

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Pricing & Ordering

Quantity Unit Price Ext. Price
310+ $0.1871 $58.0010
755+ $0.1536 $115.9680
1,165+ $0.1490 $173.5850
1,600+ $0.1444 $231.0400
2,070+ $0.1398 $289.3860
2,780+ $0.1247 $346.6660
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 26,900 pieces
MOQ: 310 pcs
Order Increment : 1 pcs
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