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Same model may have multiple batches, images only for reference.
SI5906DU-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI5906DU-T1-GE3

Part No SI5906DU-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 6A PPAK FET
Datasheet
SI5906DU-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 6A
Maximum Rds On at Id,Vgs 31 mOhm @ 4.8A, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 8.6nC @ 10V
Max Input Capacitance 300pF @ 15V
Maximum Power Dissipation 10.4W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK ChipFet Dual
Win Source Part Number 1096095-SI5906DU-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI5906DU-T1-GE3 CAD Model

Description

The Vishay 1096095-SI5906DU-T1-GE3 is a dual N-channel MOSFET that features logic level gate and is designed to operate in a temperature range of -55°C to 150°C.

  • Status: obsolete
  • Supply and Demand: balance
  • Package: PowerPAK ChipFet Dual
  • Power Dissipation (Max): 10.4W
  • Continuous Drain Current @ 25°C: 6A
  • Rds On (Max) @ Id, Vgs: 31 mOhm @ 4.8A, 10V
  • Gate Charge (Max): 8.6nC @ 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
145+ $0.3999 $57.9855
355+ $0.3282 $116.5110
550+ $0.3179 $174.8450
755+ $0.3077 $232.3135
975+ $0.2975 $290.0625
1,300+ $0.2666 $346.5800
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 16,290 pieces
MOQ: 145 pcs
Order Increment : 1 pcs
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