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Same model may have multiple batches, images only for reference.
SI6459BDQ-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI6459BDQ-T1-E3

Part No SI6459BDQ-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 2.2A 8-TSSOP
Datasheet
SI6459BDQ-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 22nC @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1W (Ta)
Maximum Rds On at Id,Vgs 115 mOhm @ 2.7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSSOP
Dimension 8-TSSOP (0.173", 4.40mm Width)
Win Source Part Number 104274-SI6459BDQ-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI6459BDQ-T1-E3 CAD Model

Description

The 104274-SI6459BDQ-T1-E3 is a P-Channel MOSFET manufactured by Vishay.

  • Mounting Type: SMD (SMT)
  • Application: Discrete semiconductor
  • Status: Obsolete (EOL)
  • Popularity: Medium
  • Supply and Demand Status: Balanced
  • Drive Voltage: 4.5V, 10V
  • Drain-Source Breakdown Voltage: 60V
  • Maximum Rds On @ Id, Vgs: 115 mOhm @ 2.7A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
85+ $0.6909 $58.7265
205+ $0.5670 $116.2350
320+ $0.5492 $175.7440
435+ $0.5315 $231.2025
565+ $0.5139 $290.3535
755+ $0.4606 $347.7530
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MOQ: 85 pcs
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