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Same model may have multiple batches, images only for reference.
SI6943BDQ-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI6943BDQ-T1-E3

Part No SI6943BDQ-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 12V 2.3A 8TSSOP
Datasheet
SI6943BDQ-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 2.3A
Maximum Rds On at Id,Vgs 80 mOhm @ 2.5A, 4.5V
Gate-Source Threshold Voltage 800mV @ 250μA
Max Gate Charge 10nC @ 4.5V
Maximum Power Dissipation 800mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSSOP
Win Source Part Number 106524-SI6943BDQ-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI6943BDQ-T1-E3 CAD Model

Description

The Vishay is a dual 2 P-Channel FET with a logic-level gate and Win Source Part Number of 106524-SI6943BDQ-T1-E3.

  • Feature: Logic-level gate
  • Win Source Part Number: 106524-SI6943BDQ-T1-E3
  • Maximum Power Dissipation: 800mW
  • Drain-Source Breakdown Voltage: 12V
  • Continuous Drain Current @ 25°C: 2.3A
  • Gate-Source Threshold Voltage @ 250μA: 800mV
  • Maximum Rds On @ Id, Vgs: 80 mOhm @ 2.5A, 4.5V
  • Application: Power supplies, motor control, and battery management
  • Status: Obsolete (EOL)
  • Popularity: Medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.1587 $57.9350
125+ $0.9508 $118.8500
190+ $0.9212 $175.0280
260+ $0.8914 $231.7640
340+ $0.8616 $292.9440
450+ $0.7725 $347.6250
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,000 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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