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Same model may have multiple batches, images only for reference.
SI4442DY-T1-E3 Vishay
Same model may have multiple batches, images only for reference.

SI4442DY-T1-E3

Part No SI4442DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 15A 8-SOIC
Datasheet
SI4442DY-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 15A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 50nC @ 4.5V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 1.6W (Ta)
Maximum Rds On at Id,Vgs 4.5 mOhm @ 22A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 028493-SI4442DY-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI4442DY-T1-E3 CAD Model

Description

The Vishay 028493-SI4442DY-T1-E3 is a N-Channel MOSFET that is designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 15A @ 25°C
  • Package Width: 0.154 inches
  • Mounting: surface mount technology (SMT)
  • Maximum Gate-Source Voltage: ±12V
  • Maximum Rds On @ Id,Vgs: 4.5 mOhm @ 22A, 10V
  • Gate-Source Threshold Voltage: 1.5V @ 250μA
  • Maximum Gate Charge: 50nC @ 4.5V
  • Operating Temperature: -55°C to 150°C (TJ)
  • Packaging: reel
  • Supply and demand status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.3620 $61.2900
105+ $1.1176 $117.3480
165+ $1.0827 $178.6455
225+ $1.0477 $235.7325
290+ $1.0129 $293.7410
385+ $0.9081 $349.6185
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,500 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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