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SI6955DQ-T1-E3

Part No SI6955DQ-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package TSSOP
Continuous Drain Current (ID) 2.5 A
Drain to Source Resistance 85 mΩ
Drain to Source Voltage (Vdss) -30 V
Element Configuration Dual
Fall Time 8 ns
Gate to Source Voltage (Vgs) 20 V
Height 1 mm
Length 3 mm
Maximum Operating Temperature 150 °C
Max Power Dissipation 1 W
Min Operating Temperature -55 °C
Number of Channels 2
Rise Time 9 ns
RoHS Compliant
Turn-Off Delay Time 14 ns
Turn-On Delay Time 7 ns
Weight 157.991892 mg
Width 4.4 mm
Win Source Part Number 1092927-SI6955DQ-T1-E3
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Vishay
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian SI6955DQ-T1-E3 CAD Model

Description

This electronic component is a transistor-FET, MOSFET-RF that is manufactured by Vishay.

  • Win Source Part Number: 1092927-SI6955DQ-T1-E3
  • Case/Package: TSSOP
  • Length: 3 mm
  • Height: 1 mm
  • Width: 4.4 mm
  • Drain-to-Source Voltage (Vdss): -30 V
  • Rise Time: 9 ns
  • Fall Time: 8 ns
  • Maximum Operating Temperature: 150 °C
  • Gate-to-Source Voltage (Vgs): 20 V
  • Continuous Drain Current (ID): 2.5 A
  • Turn-On Delay Time: 7 ns
  • Turn-Off Delay Time: 14 ns
  • Drain-to-Source Resistance: 85 mΩ
  • Material: Made of high-quality materials
  • Supply and Demand Status: Shortage

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