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SI7114DN-T1-E3

Part No SI7114DN-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 11.7A 1212-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 11.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 19nC @ 4.5V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.5W (Ta)
Maximum Rds On at Id,Vgs 7.5 mOhm @ 18.3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8
Dimension PowerPAK 1212-8
Win Source Part Number 028601-SI7114DN-T1-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI7114DN-T1-E3 CAD Model

Description

The Vishay 028601-SI7114DN-T1-E3 is an N-Channel MOSFET designed for use in electronic circuits.

  • Popularity: High
  • Supply and Demand Status: Balance
  • Manufacturer: Vishay
  • Win Source Part Number: 028601-SI7114DN-T1-E3
  • Category: discrete semiconductor products
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current at 25°C: 11.7A (Ta)

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.1880 $53.4600
90+ $1.1128 $100.1520
140+ $1.0752 $150.5280
200+ $1.0000 $200.0000
260+ $0.9625 $250.2500
325+ $0.9249 $300.5925
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,000 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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