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SI7121ADN-T1-GE3

Part No SI7121ADN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V D-S PPAK 1212-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 50nC @ 10V
Max Input Capacitance 1870pF @ 15V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 3.5W (Ta), 27.8W (Tc)
Maximum Rds On at Id,Vgs 15 mOhm @ 7A, 10V
Temperature Range - Operating -50°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8
Dimension PowerPAK 1212-8
Win Source Part Number 1096134-SI7121ADN-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI7121ADN-T1-GE3 CAD Model

Description

The Vishay SI7121ADN-T1-GE3 is a P-channel MOSFET used in discrete semiconductor products.

  • Channel Type: P-channel
  • Application: Discrete Semiconductor Products
  • Power Dissipation: 3.5W (Ta), 27.8W (Tc)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 12A @ 25°C
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Package: PowerPAK 1212-8
  • ECCN: EAR99
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
145+ $0.3538 $51.3010
305+ $0.3314 $101.0770
470+ $0.3202 $150.4940
675+ $0.2978 $201.0150
875+ $0.2866 $250.7750
1,090+ $0.2754 $300.1860
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,160 pieces
MOQ: 145 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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