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Same model may have multiple batches, images only for reference.
IRFR7546PBF Real Image
Same model may have multiple batches, images only for reference.

IRFR7546PBF

Part No IRFR7546PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 56A DPAK
Datasheet
IRFR7546PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 3.7V @ 100μA
Max Gate Charge 87nC @ 10V
Max Input Capacitance 3020pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 99W (Tc)
Maximum Rds On at Id,Vgs 7.9 mOhm @ 43A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1047089-IRFR7546PBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFR7546PBF CAD Model

Description

The Infineon Technologies MOSFET is a high-performance N-channel device designed for use in power electronics applications.

  • Manufacturer: Infineon Technologies
  • Channel Type: N-Channel
  • Power Dissipation: 99W (Tc)
  • Package: DPAK (TO-252-3, DPak (2 Leads + Tab), SC-63)
  • Gate-Source Threshold Voltage: 3.7V @ 100μA
  • Gate Charge: 87nC @ 10V
  • Rds On @ Id,Vgs: 7.9 mOhm @ 43A, 10V
  • Status: Not for new designs
  • Temperature Range: -55°C to 175°C (TJ)

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230+ $0.5075 $116.7250
355+ $0.4917 $174.5535
490+ $0.4759 $233.1910
630+ $0.4599 $289.7370
845+ $0.4123 $348.3935
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