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Same model may have multiple batches, images only for reference.
IPD088N06N3 G Real Image
Same model may have multiple batches, images only for reference.

IPD088N06N3 G

Part No IPD088N06N3 G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 50A TO252-3
Datasheet
IPD088N06N3 G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series OptiMOS
Packaging Reel package
Channel Type Type N
Technology MOSFET
Drain Source Voltage 60V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 34μA
Gate Charge (Qg) (Maximum) @ Vgs 48nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 3900pF @ 30V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 71W (Tc)
Rds On (Maximum) @ Id, Vgs 8.8 mOhm @ 50A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting SMD
Manufacturer Package PG-TO252-3
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 776858-IPD088N06N3 G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPD088N06N3 G CAD Model

Description

The IPD088N06N3 G is a MOSFET from the OptiMOS series, manufactured by Infineon Technologies.

  • Maximum Power Dissipation (Tc): 71W
  • Current-Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Package: P-TO252-3
  • Mounting: SMD
  • Drive Voltage: 10V
  • Channel Type: N
  • Drain-Source Voltage: 60V
  • Gate-Source Threshold Voltage: 4V @ 34μA
  • Input Capacitance @ 30V: 3900pF
  • Gate Charge @ 10V: 48nC
  • Category: Discrete Semiconductor Products
  • Popularity: Medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.7917 $51.4605
155+ $0.6496 $100.6880
240+ $0.6293 $151.0320
330+ $0.6090 $200.9700
425+ $0.5887 $250.1975
570+ $0.5278 $300.8460
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Availability: 10,023 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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