The SI7156DP-T1-GE3 is a P-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Vishay. It is designed for a wide range of power management and switching applications where efficiency and space are critical. This MOSFET offers low on-resistance and fast switching speeds, making it suitable for high-performance circuits.

Applications:

• Load switching in portable devices
• Power management in notebooks and tablets
• Battery management systems
• DC-DC converters
• Power OR-ing applications

Features:

• Low on-resistance (RDS(on))
• Fast switching speed
• Low gate charge (Qg)
• TrenchFET® Power MOSFET technology
• 100% Rg tested
• Halogen-free according to IEC 61249-2-21 definition

Benefits:

• Reduces power loss and improves efficiency due to low on-resistance
• Enables faster switching speeds for high-frequency applications
• Minimizes gate drive requirements due to low gate charge
• Enhanced thermal performance due to TrenchFET technology
• Guaranteed gate resistance for improved reliability
• Environmentally friendly due to halogen-free construction

Technical Specifications:

The SI7156DP-T1-GE3 features a drain-source voltage (VDS) of -30V and a continuous drain current (ID) of -11A at a case temperature of 25°C. The on-resistance (RDS(on)) is typically 14 mΩ at VGS = -10V and 21 mΩ at VGS = -4.5V. The gate charge (Qg) is typically 14 nC. The threshold voltage (VGS(th)) ranges from -1V to -3V. It has a power dissipation (PD) of 2.5W. The operating junction temperature range is -55°C to +150°C. The package type is PowerPAK® SO-8. It uses surface mount technology. The input capacitance is around 800 pF, and the output capacitance is around 300 pF. The thermal resistance, junction-to-ambient, is approximately 50°C/W.

The SI7156DP-T1-GE3 offers a balance of low on-resistance, fast switching speed, and thermal performance, making it an excellent choice for a wide range of power management applications. Its compact PowerPAK SO-8 package allows for high-density designs.