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SI7172DP-T1-GE3

Part No SI7172DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description N-Channel 200-V (D-S) MOSFET
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Series TrenchFET
Packaging Reel - TR
Channel Type Type N
Technology MOSFET
Drain Source Voltage 200V
Current - Continuous Drain (Id) @ 25°C 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Vgs(th) (Maximum) @ Id 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 77nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 2250pF @ 100V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 5.4W (Ta), 96W (Tc)
Rds On (Maximum) @ Id, Vgs 70 mOhm @ 5.9A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package PowerPAK SO-8
Package PowerPAK SO-8
Win Source Part Number 1249415-SI7172DP-T1-GE3
Manufacturer Homepage www.vishay.com
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI7172DP-T1-GE3 CAD Model

Description

The SI7172DP-T1-GE3 is a TrenchFET MOSFET component manufactured by Vishay.

  • Maximum Power Dissipation: 5.4W (Ta) and 96W (Tc)
  • Channel Type: N
  • Drain Source Voltage: 200V
  • Gate Charge (Qg): 77nC @ 10V
  • Input Capacitance (Ciss): 2250pF @ 100V
  • Maximum Vgs: ±20V
  • Rds On (Maximum) @ Id, Vgs: 70 mOhm @ 5.9A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
16+ $3.3264 $53.2224
33+ $3.1158 $102.8214
50+ $3.0106 $150.5300
72+ $2.8000 $201.6000
93+ $2.6948 $250.6164
116+ $2.5895 $300.3820
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 21,000 pieces
MOQ: 16 pcs
Order Increment : 1 pcs
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