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Same model may have multiple batches, images only for reference.
SI7174DP-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI7174DP-T1-GE3

Part No SI7174DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 60A PPAK SO-8
Datasheet
SI7174DP-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 72nC @ 10V
Max Input Capacitance 2770pF @ 40V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 6.25W (Ta), 104W (Tc)
Maximum Rds On at Id,Vgs 7 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 107504-SI7174DP-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian SI7174DP-T1-GE3 CAD Model

Description

The Vishay 107504-SI7174DP-T1-GE3 is an N-Channel MOSFET with a PowerPAK SO-8 case/package.

  • Manufacturer: Vishay
  • Package/Case: PowerPAK SO-8
  • Channel Type: N-Channel
  • Power Dissipation: 6.25W (Ta), 104W (Tc)
  • Drain-Source Breakdown Voltage: 75V
  • Gate-Source Threshold Voltage: 4.5V @ 250μA
  • Maximum Gate Charge: 72nC @ 10V
  • Maximum Rds On (Id,Vgs): 7 mOhm @ 10A, 10V
  • Continuous Drain Current: 60A (Tc) @ 25°C
  • Application: Industrial and Power Management
  • Supply and Demand: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
23+ $2.2402 $51.5246
48+ $2.0985 $100.7280
74+ $2.0276 $150.0424
107+ $1.8858 $201.7806
138+ $1.8149 $250.4562
173+ $1.7440 $301.7120
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Availability: 3,000 pieces
MOQ: 23 pcs
Order Increment : 1 pcs
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