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NTUD3171PZT5G

Part No NTUD3171PZT5G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 20V 0.2A SOT-963
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 200mA
Maximum Rds On at Id,Vgs 5 Ohm @ 100mA, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Input Capacitance 13.5pF @ 15V
Maximum Power Dissipation 125mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-963
Win Source Part Number 060710-NTUD3171PZT5G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTUD3171PZT5G CAD Model

Description

The NTUD3171PZT5G is a cutting-edge MOSFET produced by ON Semiconductor, renowned for its high efficiency and reliability in a variety of electronic applications. This product is particularly designed to meet the demanding requirements of modern circuit designs, offering a compact, power-efficient solution for switching and amplification needs.

Key Features

  • Low On-Resistance: The NTUD3171PZT5G boasts an exceptionally low on-resistance, which minimizes power loss and improves overall efficiency, making it ideal for power-sensitive applications.
  • Dual P-Channel: This device features a dual P-Channel configuration, allowing for simplified circuit design and reduced component count in applications requiring complementary P-Channel MOSFETs.
  • Small Footprint: Housed in a compact SOT-963 package, the NTUD3171PZT5G is perfect for space-constrained applications, without compromising on performance.
  • High-Temperature Performance: Capable of operating at high temperatures, this MOSFET ensures reliability and stability even under stressful conditions.
  • Gate Protection: The NTUD3171PZT5G is equipped with integrated gate protection diodes that safeguard the device against excessive voltage, thus enhancing its durability.

Applications

The versatility of the NTUD3171PZT5G allows it to be used in a wide array of applications. It is particularly suitable for:

  • Power Management Circuits
  • Load/Power Switching
  • Battery Management Systems
  • Portable Devices
  • DC-DC Converters

Technical Specifications

Parameter Value Drain-Source Voltage (V<sub>DS) -20V Continuous Drain Current (I<sub>D) -3.7A Power Dissipation (P<sub>D) 1.25W Operating Temperature Range -55°C to +150°C

With its robust design and superior performance, the NTUD3171PZT5G from ON Semiconductor stands out as a top choice for designers looking to enhance their electronic projects with a reliable and efficient P-Channel MOSFET.

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Pricing & Ordering

Quantity Unit Price Ext. Price
150+ $0.3908 $58.6200
365+ $0.3206 $117.0190
560+ $0.3107 $173.9920
770+ $0.3007 $231.5390
995+ $0.2906 $289.1470
1,330+ $0.2606 $346.5980
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,000 pieces
MOQ: 150 pcs
Order Increment : 1 pcs
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