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SI7178DP-T1-GE3

Part No SI7178DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 60A PPAK SO-8
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 72nC @ 10V
Max Input Capacitance 2870pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 6.25W (Ta), 104W (Tc)
Maximum Rds On at Id,Vgs 14 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 028612-SI7178DP-T1-GE3
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian SI7178DP-T1-GE3 CAD Model

Description

The 028612-SI7178DP-T1-GE3 is a MOSFET transistor with an N-channel polarity.

  • Polarity: N-channel
  • Power Dissipation: 6.25W (Ta), 104W (Tc)
  • Drive Voltage: 10V
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 60A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4.5V @ 250μA
  • Maximum Gate Charge: 72nC @ 10V
  • Maximum Input Capacitance: 2870pF @ 50V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On (Id,Vgs): 14 mOhm @ 10A, 10V
  • Package/Case: PowerPAK SO-8
  • Mounting: SMD (SMT)
  • Operating Temperature: -55°C to 150°C (TJ)
  • Application: Industrial and Power Management

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Pricing & Ordering

Quantity Unit Price Ext. Price
22+ $2.3582 $51.8804
46+ $2.2090 $101.6140
71+ $2.1344 $151.5424
101+ $1.9851 $200.4951
131+ $1.9105 $250.2755
164+ $1.8359 $301.0876
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 18,000 pieces
MOQ: 22 pcs
Order Increment : 1 pcs
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