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SI7218DN-T1-E3

Part No SI7218DN-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 24A 1212-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 24A
Maximum Rds On at Id,Vgs 25 mOhm @ 8A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 17nC @ 10V
Max Input Capacitance 700pF @ 15V
Maximum Power Dissipation 23W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8 Dual
Win Source Part Number 028617-SI7218DN-T1-E3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI7218DN-T1-E3 CAD Model

Description

The SI7218DN-T1-E3 is a 2 N-Channel Dual FET manufactured by Vishay.

  • Manufacturer: Vishay
  • FET Type: 2 N-Channel Dual
  • Application: Power management and motor control circuits
  • Configuration: Standard
  • Mounting: SMD (SMT)
  • Category: Discrete Semiconductor Products
  • Status: Active
  • Temperature Range: -55°C to 150°C (TJ)
  • Package: PowerPAK 1212-8 Dual
  • Power Dissipation: 23W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current (25°C): 24A
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 17nC @ 10V
  • Maximum Input Capacitance: 700pF @ 15V
  • Maximum Rds On (Id,Vgs): 25 mOhm @ 8A, 10V
  • Supply and Demand: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.7977 $51.8505
135+ $0.7463 $100.7505
210+ $0.7206 $151.3260
300+ $0.6691 $200.7300
390+ $0.6434 $250.9260
490+ $0.6176 $302.6240
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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