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SI7302DN-T1-E3

Part No SI7302DN-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 220V 8.4A 1212-8 / Trans MOSFET N-CH 220V 8.4A 8-Pin PowerPAK 1212 T/R
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Series TrenchFET
Packaging Reel package
Channel Type Type N
Technology MOSFET
Drain Source Voltage 220V
Current - Continuous Drain (Id) @ 25°C 8.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Maximum) @ Id 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 21nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 645pF @ 15V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 3.8W (Ta), 52W (Tc)
Rds On (Maximum) @ Id, Vgs 320 mOhm @ 2.3A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package PowerPAK 1212-8
Package PowerPAK 1212-8
Win Source Part Number 794310-SI7302DN-T1-E3
Popularity Medium
Supply and Demand Status Limited
Family Name Si7302DN
Introduction Date March 07, 2005
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian SI7302DN-T1-E3 CAD Model

Description

The Vishay Siliconix Si7302DN MOSFET is a high-performance power transistor designed for use in a range of discrete semiconductor products.

  • Series: TrenchFET
  • Current: 8.4A (Tc)
  • Maximum Power Dissipation: 3.8W (Ta), 52W (Tc)
  • Operating Temperature: -55°C to 150°C (TJ)
  • Drain-Source Voltage: 220V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Input Capacitance: 645pF @ 15V
  • Maximum Gate Charge: 21nC @ 10V
  • Package: PowerPAK 1212-8

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