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Same model may have multiple batches, images only for reference.
SI7358ADP-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI7358ADP-T1-E3

Part No SI7358ADP-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 14A PPAK SO-8
Datasheet
SI7358ADP-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 14A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 40nC @ 4.5V
Max Input Capacitance 4650pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.9W (Ta)
Maximum Rds On at Id,Vgs 4.2 mOhm @ 23A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 064561-SI7358ADP-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI7358ADP-T1-E3 CAD Model

Description

This Vishay MOSFET is an N-channel device with a drain-source breakdown voltage of 30V and a continuous drain current of 14A (Ta).

  • Channel Type: N-channel
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 14A (Ta)
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 40nC @ 4.5V
  • Maximum Input Capacitance: 4650pF @ 15V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On: 4.2 mOhm @ 23A, 10V
  • Power Dissipation: 1.9W (Ta)
  • Packaging: PowerPAK SO-8
  • Status: obsolete (EOL)

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Pricing & Ordering

Quantity Unit Price Ext. Price
25+ $2.3992 $59.9800
59+ $1.9686 $116.1474
91+ $1.9071 $173.5461
126+ $1.8456 $232.5456
162+ $1.7840 $289.0080
217+ $1.5994 $347.0698
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Availability: 8,750 pieces
MOQ: 25 pcs
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